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Etching
| Poly-Si/Amorphous-Si | HBr SiCl4 |
|
|---|---|---|
| Interconnect |
BCｌ3 BBr3 CHCｌ3 |
|
| Dielectric | Fluorocarbon Compound | |
Ion Implantation
|
BF3（B Compound） PF3 GeF4 Sb Compound |
Cleaning
|
CH3OH Fluorocarbon Compound |
Interconnect
| Seed Layer | Cu-CVD |
HfacCu:TMVS/TMVS （Hfac）2Cu:DMDV |
|---|---|---|
| Al-CVD |
DMAH DMEAA |
|
| Barrier Metal | TiN-CVD |
TiCl4 TDMAT TDEAT |
| TaN-CVD | Amino tantalum Compound |
Interlayer Dielectric
| Low-k (Low Dielectric Constant Film) |
Low-k CVD |
DMDMOS Alkyl silicon compound |
|---|---|---|
| (High Dielectric Constant Film) | BST-CVD |
Ba(DPM)2 Sr(DPM)2 Ti(i-OC3H7)4 |
| SBT-CVD |
Sr(DPM)2 Bi(CH3)3/Solution Ta(OC2H5)5 |
|
| High-k CVD |
TMA Zr[N(C2H5)2]4 Hf[N(C2H5)2]4 |
|
| Ferroelectric | PZT-CVD |
Pb(DPM)2 Zr(DPM)4 Zr(t-OC4H9)4 Ti(i-OC3H7)4 |
| Electrode |
Pt(CH3)(CH3C5H4) Ir(AcAc)3 |
|