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Title: Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure
Place: Advanced Metallization Conference 2008: 18th Asian Session
2008/10/8The University of Tokyo
Title: Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure
Place: Advanced Metallization Conference 2008 (AMC) 2008
2008/9/23San Diego, U.S.A
Title:Chemical Vapor Deposition of Ni-Pt thin film using Pt(PF3)4 and Ni(PF3)4
Place:Advanced Metallization Conference 2007 (ADMETA 2007)
2007/10/23Tokyo,Japan
Title:Chemical Vapor Deposition of Ni-Pt thin film using Pt(PF3)4 and Ni(PF3)4
Place:2007 International Workshop on Sustainable Energy and Materials
2007/10/6Meiji University
Title:W-CVD using biscyclopentadienyltungsten system
Place:Advanced Metallization Conference 2006 (AMC) 2006
2006/10/18San Diego, U.S.A
Title:Properties of chemical reaction during Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8
Place:Advanced Metallization Conference 2006 (ADMETA2006)
2006/9/26Tokyo,Japan
Title:Properties of Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8
Place:International Workshop on Sustainable Energy and Materials (IWSEM2006)
2006/9/5Tokyo,Japan
Title:W-CVD using (i-PrCp)2WH2
Place:International Workshop on Sustainable Energy and Materials (IWSEM2006)
2006/9/5Tokyo,Japan
Title:Ni-silicide deposition by CVD (II)
Place:The Japan Society of Applied Physics and Related Societies (The 67th Autumn Meeting)
2006/8/31Ritsumeikan University
Title:Chemical Vapor Deposition of NiSi using Ni(PF3)4 and Si3H8
Place:Asia-Pacific Conference on Semiconducting Silicide 2006 (APAC-silicide 2006)
2006/7/30kyoto, Japan
Title:Ultra Low-k Film Deposition By PECVD Using a Novel Organosilane as a Precursor
Place:2006 MRS Spring Meeting
2006/4/18San Francisco, CA
Title:Ni-silicide deposition by CVD
Place:The Japan Society of Applied Physics and Related Societies (The 53rd Spring Meeting)
2006/3/24Musashi Institute of Technology University
Title:Ni-silicide precursor for gate electrodes
Place:27th International Symposium of Dry Process (DPS2006)
2005/11/29Cheju, Korea
Title:Chemical Vapor Deposition of Ni-silicide for gate electrodes
Place:Advanced Metallization Conference 2005 (ADMETA2005)
2005/10/13Tokyo,Japan
Title:Composition control of Ni-silicide by CVD using Ni(PF3)4 and Si3H8
Place:The 2005 International Conference on Solid State Devices and Materials (SSDM 2005)
2005/9/14Kobe,Japan
Title:Ni-silicide gate electrode deposition by CVD
Place:The Japan Society of Applied Physics and Related Societies (The 66th Autumn Meeting)
2005/9/10The University of Tokushima
Title:Liquid CVD precursor (i-PrCp)2WH2 for W deposition
Place:The Japan Society of Applied Physics and Related Societies (The 67th Autumn Meeting)
2005/9/10The University of Tokushima
Title:Low-k thin film deposition using new Si precursor by plasma CVD
Place:The Japan Society of Applied Physics and Related Societies (The 66th Autumn Meeting)
2005/9/7The University of Tokushima
Title:Nickel thin film deposition using Ni(PF3)4 for LSI electrode
Place:207th meeting of Electrochemical society (ECS)
2005/5/17Quebec, Canada
Title:Ni thin film deposition using Ni(PF3)4 (II)
Place:The Japan Society of Applied Physics and Related Societies (The 52nd Spring Meeting)
2005/4/1Saitama University
Title:Ni Thin Film Deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4
Place:Advanced Metallization Conference 2004 (ADMETA2004)
2004/9/29Tokyo,Japan
Title:Ni Thin Film Deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4
Place:The Japan Society of Applied Physics and Related Societies (The 65th Autumn Meeting)
2004/9/2Tohoku Gakuin University
Title:Surface reactions in Ni MOCVD using cyclopentadienylallylnickel as a precursor
Place:14th International Conference on Crystal Growth (ICCG-14)
2004/8/9Grenoble, France
Title:Ni film deposition by MOCVD method
Place:The Japan Society of Applied Physics and Related Societies (The 51st Spring Meeting)
2004/3/28Tokyo University of Technology
Title:Ni precursor for chemical vapor deposition of NiSi
Place:The 2003 International Conference on Solid State Devices and Materials (SSDM 2003)
2003/9/17Tokyo,Japan
Title:NiSi(II) film deposition by MOCVD method
Place:The Japan Society of Applied Physics and Related Societies (The 64th Autumn Meeting)
2003/8/31Fukuoka University
Title:Organometallic Hf and Si precursors for Hf1-XSi XO2 thin film formation
Place:Advanced Metallization Conference 2002 (ADMETA2002)
2002/10/30Tokyo,Japan
Title:Organometallic Hf and Si precursors for HfSiO2-CVD and ALD process
Place:Atomic Layer Deposition Conference (ALD2002)
2002/8/20Seoul, Korea
Title:HfO2 and Hf1-xSixO2 deposition by MOCVD using TDEAH
Place:Advanced Metallization Conference 2001 (ADMETA2001)
2001/10/30Tokyo,Japan
Title:HfO2 film deposition by MOCVD method
Place:The Japan Society of Applied Physics and Related Societies (The 62nd Autumn Meeting)
2001/9/2Aichi Institute of Technology
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