| Title: |
Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure |
| Place: |
Advanced Metallization Conference 2008: 18th Asian Session |
| 2008/10/8The University of Tokyo |
| Title: |
Realization of High Stable Porous SiOCH Films (k=2.3-2.4, Er=8.0 GPa) using DcPDMOS by O2 Addition and UV Cure |
| Place: |
Advanced Metallization Conference 2008 (AMC) 2008 |
| 2008/9/23San Diego, U.S.A |
| Title: | Chemical Vapor Deposition of Ni-Pt thin film using Pt(PF3)4 and Ni(PF3)4 |
|---|
| Place: | Advanced Metallization Conference 2007 (ADMETA 2007) |
|---|
|
2007/10/23Tokyo,Japan |
| Title: | Chemical Vapor Deposition of Ni-Pt thin film using Pt(PF3)4 and Ni(PF3)4 |
|---|
| Place: | 2007 International Workshop on Sustainable Energy and Materials |
|---|
|
2007/10/6Meiji University |
| Title: | W-CVD using biscyclopentadienyltungsten system |
|---|
| Place: | Advanced Metallization Conference 2006 (AMC) 2006 |
|---|
|
2006/10/18San Diego, U.S.A |
| Title: | Properties of chemical reaction during Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8 |
|---|
| Place: | Advanced Metallization Conference 2006 (ADMETA2006) |
|---|
|
2006/9/26Tokyo,Japan |
| Title: | Properties of Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8 |
|---|
| Place: | International Workshop on Sustainable Energy and Materials (IWSEM2006) |
|---|
|
2006/9/5Tokyo,Japan |
| Title: | W-CVD using (i-PrCp)2WH2 |
|---|
| Place: | International Workshop on Sustainable Energy and Materials (IWSEM2006) |
|---|
|
2006/9/5Tokyo,Japan |
| Title: | Ni-silicide deposition by CVD (II) |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 67th Autumn Meeting) |
|---|
|
2006/8/31Ritsumeikan University |
| Title: | Chemical Vapor Deposition of NiSi using Ni(PF3)4 and Si3H8 |
|---|
| Place: | Asia-Pacific Conference on Semiconducting Silicide 2006 (APAC-silicide 2006) |
|---|
|
2006/7/30kyoto, Japan |
| Title: | Ultra Low-k Film Deposition By PECVD Using a Novel Organosilane as a Precursor |
|---|
| Place: | 2006 MRS Spring Meeting |
|---|
|
2006/4/18San Francisco, CA |
| Title: | Ni-silicide deposition by CVD |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 53rd Spring Meeting) |
|---|
|
2006/3/24Musashi Institute of Technology University |
| Title: | Ni-silicide precursor for gate electrodes |
|---|
| Place: | 27th International Symposium of Dry Process (DPS2006) |
|---|
|
2005/11/29Cheju, Korea |
| Title: | Chemical Vapor Deposition of Ni-silicide for gate electrodes |
|---|
| Place: | Advanced Metallization Conference 2005 (ADMETA2005) |
|---|
|
2005/10/13Tokyo,Japan |
| Title: | Composition control of Ni-silicide by CVD using Ni(PF3)4 and Si3H8 |
|---|
| Place: | The 2005 International Conference on Solid State Devices and Materials (SSDM 2005) |
|---|
|
2005/9/14Kobe,Japan |
| Title: | Ni-silicide gate electrode deposition by CVD |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 66th Autumn Meeting) |
|---|
|
2005/9/10The University of Tokushima |
| Title: | Liquid CVD precursor (i-PrCp)2WH2 for W deposition |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 67th Autumn Meeting) |
|---|
|
2005/9/10The University of Tokushima |
| Title: | Low-k thin film deposition using new Si precursor by plasma CVD |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 66th Autumn Meeting) |
|---|
|
2005/9/7The University of Tokushima |
| Title: | Nickel thin film deposition using Ni(PF3)4 for LSI electrode |
|---|
| Place: | 207th meeting of Electrochemical society (ECS) |
|---|
|
2005/5/17Quebec, Canada |
| Title: | Ni thin film deposition using Ni(PF3)4 (II) |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 52nd Spring Meeting) |
|---|
|
2005/4/1Saitama University |
| Title: | Ni Thin Film Deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4 |
|---|
| Place: | Advanced Metallization Conference 2004 (ADMETA2004) |
|---|
|
2004/9/29Tokyo,Japan |
| Title: | Ni Thin Film Deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4 |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 65th Autumn Meeting) |
|---|
|
2004/9/2Tohoku Gakuin University |
| Title: | Surface reactions in Ni MOCVD using cyclopentadienylallylnickel as a precursor |
|---|
| Place: | 14th International Conference on Crystal Growth (ICCG-14) |
|---|
|
2004/8/9Grenoble, France |
| Title: | Ni film deposition by MOCVD method |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 51st Spring Meeting) |
|---|
|
2004/3/28Tokyo University of Technology |
| Title: | Ni precursor for chemical vapor deposition of NiSi |
|---|
| Place: | The 2003 International Conference on Solid State Devices and Materials (SSDM 2003) |
|---|
|
2003/9/17Tokyo,Japan |
| Title: | NiSi(II) film deposition by MOCVD method |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 64th Autumn Meeting) |
|---|
|
2003/8/31Fukuoka University |
| Title: | Organometallic Hf and Si precursors for Hf1-XSi XO2 thin film formation |
|---|
| Place: | Advanced Metallization Conference 2002 (ADMETA2002) |
|---|
|
2002/10/30Tokyo,Japan |
| Title: | Organometallic Hf and Si precursors for HfSiO2-CVD and ALD process |
|---|
| Place: | Atomic Layer Deposition Conference (ALD2002) |
|---|
|
2002/8/20Seoul, Korea |
| Title: | HfO2 and Hf1-xSixO2 deposition by MOCVD using TDEAH |
|---|
| Place: | Advanced Metallization Conference 2001 (ADMETA2001) |
|---|
|
2001/10/30Tokyo,Japan |
| Title: | HfO2 film deposition by MOCVD method |
|---|
| Place: | The Japan Society of Applied Physics and Related Societies (The 62nd Autumn Meeting) |
|---|
|
2001/9/2Aichi Institute of Technology |
